收藏本站
New Product
Si2308BDS
Vishay Siliconix
MOSFET SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS /T J
Δ V GS(th) /T J
V DS = 0 V, I D = 250 μA
I D = 250 μA
60
55
-5
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
1
3
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 20 V
V DS = 60 V, V GS = 0 V
V DS = 60 V, V GS = 0 V, T J = 55 °C
V DS ≥ 5 V, V GS = 10 V
8
± 100
1
10
nA
μA
A
Drain-Source On-State Resistance a
Forward Transconductance a
R DS(on)
g fs
V GS = 10 V, I D = 1.9 A
V GS = 4.5 V, I D = 1.7 A
V DS = 15V, I D = 1.9 A
0.130
0.160
5
0.156
0.192
Ω
S
Dynamic b
Input Capacitance
C iss
190
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 30 V, V GS = 0 V, f = 1 MHz
26
15
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 30 V, V GS = 10 V, I D = 1.9 A
V DS = 30 V, V GS = 4.5 V, I D = 1.9 A
4.5
2.3
0.8
6.8
3.5
nC
Gate-Drain Charge
Q gd
1
Gate Resistance
R g
f = 1 MHz
0.6
2.8
5.6
Ω
Turn-On Delay Time
t d(on)
4
6
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
t d(on)
t r
t d(off)
t f
V DD = 30 V, R L = 20 Ω
I D ? 1.5 A, V GEN = 10 V, R G = 1 Ω
V DD = 30 V, R L = 20 Ω
I D = 1.5 A, V GEN = 4.5 V, R G = 1 Ω
10
10
7
15
16
11
11
15
15
10.5
23
24
17
17
ns
ns
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
Pulse Diode Forward Current a
I S
I SM
T C = 25 °C
1.39
8
A
Body Diode Voltage
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Reverse Recovery Fall Time
Reverse Recovery Rise Time
V SD
t rr
Q rr
t a
t b
I S = 1.5 A
I F = 1.5 A, dI/dt = 100 A/μs, T J = 25 °C
0.8
15
10
12
3
1.2
23
15
V
ns
nC
ns
Notes:
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
www.vishay.com
2
Document Number: 69958
S-83053-Rev. B, 29-Dec-08
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
SI2312BDS-T1-GE3 MOSFET N-CH 20V 3.9A SOT23-3
SI2315BDS-T1-GE3 MOSFET P-CH 12V 3A SOT23-3
SI2335DS-T1-GE3 MOSFET P-CH 12V 3.2A SOT23-3
SI2367DS-T1-GE3 MOSFET P-CH 20V 3.8A SOT-23
SI2377EDS-T1-GE3 MOSFET P-CH 20V SOT-23
SI3424BDV-T1-GE3 MOSFET N-CH 30V 8A 6TSOP
SI3424DV-T1-GE3 MOSFET N-CH 30V 5A 6-TSOP
SI3433CDV-T1-E3 MOSFET P-CH 20V 6A 6TSOP
相关代理商/技术参数
SI2308BDS-T1-E3/BKN 制造商:Vishay Siliconix 功能描述:60V, N-Channel 220 MOHM 4.5 V Rated MOSFET
SI2308BDS-T1-GE3 功能描述:MOSFET 60V 2.3A 1.66W 156mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI2308BDS-T1-GE3 制造商:Vishay Siliconix 功能描述:N CHANNEL MOSFET 60V 2.3A TO-236
SI2308DS 制造商:Vishay Siliconix 功能描述:MOSFET N SOT-23
SI2308DS 制造商:Vishay Siliconix 功能描述:MOSFET N SOT-23
SI2308DS-T1 功能描述:MOSFET 60V 2.0A 1.25 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI2308DS-T1-E3 功能描述:MOSFET 60V 2.0A 1.25 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SI2308DS-T1-E3 制造商:Vishay Siliconix 功能描述:MOSFET